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The 3SK41 is engineered to handle low-noise, high-gain amplification in the very high frequency (VHF) and ultra-high frequency (UHF) spectrums. Because it utilizes a dual-gate architecture, it provides superior automatic gain control (AGC) characteristics and excellent isolation between the input and output stages.
The is a classic, high-performance N-channel dual-gate MOSFET packaged in a specialized metallic CAN-4 (TO-72) housing . Sourced over the years by major semiconductor pioneers like NEC, Hitachi, and Motorola , this discrete transistor is highly optimized for radio frequency (RF) amplification, mixing, and high-speed switching applications. 3sk41 datasheet
The following specifications are common for the 3SK41 dual-gate MOSFET: N-channel dual-gate MOS field-effect transistor. Package: Typically found in a CAN-4 (metal can) package.
: Offers factory information and application notes for brands like NEC, Hitachi, and Motorola. 3SK41 - NEC/HITACHI/MOTOROLA - Jotrin Because it utilizes a dual-gate architecture, it provides
Because the original 3SK41 is an obsolete part that can be difficult to source or expensive to purchase through legacy distributors like Littlediode , cross-referencing alternative part numbers is a common necessity. Depending on the circuit layout and performance parameters, the following parts serve as suitable substitutes: Component Part Number Package Type Key Structural Differences / Notes TO-72 / CAN-4
Because it is a dual-gate device, the pinout contains two separate gate terminals: The following specifications are common for the 3SK41
Thanks to a low on-resistance (
: High-frequency, low-noise N-channel MOSFETs (similar to 3SK41).
Historically integrated into VHF/UHF television tuners, FM radio front-ends, and specialized receiver preamplifiers to boost weak airborne signals without drowning them in internal noise.